SanDisk Reveals 4-Bits-Per-Cell Flash Memory

SAN FRANCISCO -- Building on its leadership in multi-level cell (MLC) technology, SanDisk Corporation (NASDAQ: SNDK) today announced that it will begin mass-production of the worlds first high performance 4-bits-per-cell (X4) flash memory. Using 43-nanometer (nm) process technology, this breakthrough enables 64-gigabit (Gb) memory in a single die – the highest capacity in the industry and suitable for the most demanding storage applications. SanDisk has also produced an advanced X4 controller, which is necessary to effectively manage the complexities and performance requirements of X4 memory. The X4 memory chip combines with the X4 controller chip in a multi-chip package (MCP) to provide a complete, integrated and low-cost storage solution.

“The development of X4 memory and controller technologies is a major milestone for flash memory storage that will provide significant long term benefits to SanDisk and play a critical role in future NAND flash scaling,” said Khandker Quader, senior vice president, memory technology & product development, SanDisk. “64Gb X4 is the result of numerous key innovations, and demonstrates SanDisk’s leadership in driving multi-bit flash memory with performance and cost suitable for storage-intensive applications such as music, movies, photos, GPS, games and more.”

SanDisk Corp.